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| AP05N50I RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.4 5.0A S Description AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 20 5.0 2.8 18 31.3 0.25 2 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 4.5 3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.0 65 Unit /W /W 201018072-1/4 Data & specifications subject to change without notice AP05N50I Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o o Test Conditions VGS=0V, ID=1mA 3 Min. 500 2 - Typ. 2.4 19 4.6 6.3 11 8 32 10 985 85 3.3 2.5 Max. Units 1.4 4 25 250 100 30 1580 3.8 V V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=2.7A VDS=VGS, ID=250uA VDS=10V, ID=2.7A VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=20V ID=3.1A VDS=400V VGS=10V VDD=250V ID=3.1A RG=12,VGS=10V RD=80.6 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Tj=25, IS=4.5A, VGS=0V IS=3.1A, VGS=0V, dI/dt=100A/s Min. - Typ. 300 2.6 Max. Units 1.5 V ns uC trr Qrr Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25 , IAS=3A. 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP05N50I 5 5 T C =25 C 4 o ID , Drain Current (A) 3 ID , Drain Current (A) 10V 7.0V 6.0V T C =150 o C 4 10V 7 .0V 6 .0V 5 .0 V 3 5.0V 2 2 V G = 4.0V 1 1 V G =4.0V 0 0 2 4 6 8 0 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =2.7A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 1.5 Fig 4. Normalized On-Resistance v.s. Junction Temperature T j = 150 o C T j = 25 o C Normalized VGS(th) (V) 1 IS (A) 1 0.5 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP05N50I f=1.0MHz 16 10000 I D =3.1A VGS , Gate to Source Voltage (V) V DS =260V V DS =320V V DS =400V C (pF) 100 12 C iss 8 C oss 4 C rss 0 0 10 20 30 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 100us ID (A) 1ms 10ms 100ms 0.1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 1 0.1 0.05 PDM t T 0.02 T c =25 C Single Pulse o 1s DC 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A SYMBOLS Millimeters MIN NOM MAX c2 A A1 4.50 2.30 0.50 0.95 0.45 2.30 9.70 2.91 ------- 4.70 2.65 0.70 1.20 0.65 2.60 3.41 3.20 2.54 4.90 3.00 0.90 1.50 0.80 2.90 3.91 ------- b b1 c c2 E L4 L3 L4 10.00 10.40 14.70 15.40 16.10 e L3 b1 A1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. b c e Part Marking Information & Packing : TO-220CFM Part Number LOGO 05N50I YWWSSS Package Code Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence |
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